HUGA's manufacturing facility is dedicated to making LED chips from epitaxy growth at the upstream to chip-processing at the middle stream. HUGA's epitaxy growth process can be broadly divided into several steps as described below:

Introducing HUGA's epitaxy growth process – HUGA adopts Metal-Organic Chemical Vapor Deposition (MOCVD) process in its upstream epitaxy growth process. Before the MOCVD process kicks in, the 2" sapphire substrates are well placed on the wafer carriers. If the readings for the computers of the automatic machines and the barometers of the air-bump are "normal", III group organometallic materials is injected into the chamber to form nitride epi-layers on the sapphire substrates.

Before going to the next steps, HUGA takes preliminary quality control (QC) measures such as X-Ray for structure analysis and PL test for wavelength to ensure that the epitaxy process is in conformance with quality standard.