May 1998

Incorporated with paid-in capital NT$31 million

Jun 1998

Started construction of the first fab in Taichung Industrial Park

Jul 1998

Signed a technology transfer agreement with Chung Shan Institute of Science and Technology 

Jul 1999

Raised paid-in capital to NT$598 million and went public

Feb 2001

Mass produced GaN products

Dec 2001

Granted ISO 9001

Dec 2001

Filed and granted patent on InGaN epi-wafer

Mar 2002

Filed and granted patent on InGaN epi-wafer structure

Sep 2003

Raised paid-in capital through rights issues to NT$686.37 million

Mar 2005

Installed the sixth MOCVD reactor and started construction of fab 2

Dec 2005

Expanded MOCVD capacity by adding the eighth reactor

Apr 2006

Lifted paid-in capital to NT$1.1 billion through rights issue

Jul 2006

Raised paid-in capital to NT$1.6 billion by introducing strategic investors

Aug 2006

Approved by National Science Council to move into Central Taiwan Science Park (CTSP)

Dec 2006

Invested continuously on capacity and R&D.  Patents filed or registered reached 55 and the number of MOCVD in use climbed to 16

Jan 2007

Moved into CTSP and granted raw land for the construction of fab 3

Feb 2007

Passed ISO 14001 for environmental compliance with EU standard

Apr 2007

Granted TS 16949 for quality assurance of car electronics

Jun 2007

Became fully maneuverable with major brands of MOCVD reactors

Jul 2007

Increased the number of patents filed or registered to over 100